Semiconductor device and method of protecting passivation...

Details Semiconductor device and method of protecting passivation... Semiconductor device and method of protecting passivation...

2007-11-01

2010-06-01

Smith, Bradley K (Department: 2894)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S612000

Reexamination Certificate

active

07727876

ABSTRACT:
A flip chip semiconductor device has a substrate with a plurality of active devices formed thereon. A contact pad is formed on the substrate in electrical contact with the plurality of active devices. A passivation layer is formed over the substrate and intermediate conduction layer. An adhesive layer is formed over the passivation layer. A barrier layer is formed over the adhesive layer. A wetting layer is formed over the barrier layer. The barrier layer and wetting layer in a first region are removed, while the barrier layer, wetting layer, and adhesive layer in a second region are maintained. The adhesive layer over the passivation layer in the first region are maintained until the solder bumps are formed. By keeping the adhesive layer over the passivation layer until after formation of the solder bumps, less cracking occurs in the passivation layer.

REFERENCES:
patent: 6989326 (2006-01-01), Tong et al.
patent: 7112523 (2006-09-01), Horng
patent: 2002/0180064 (2002-12-01), Hwan et al.
patent: 2004/0188378 (2004-09-01), Wu et al.
patent: 2004/0256734 (2004-12-01), Farnworth et al.

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