Semiconductor device and method of producing the same

Details Semiconductor device and method of producing the same Semiconductor device and method of producing the same

1996-02-08

1999-05-25

Chang, Joni

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438396, H01L 218242

Patent

active

059077735

ABSTRACT:
A method of producing a semiconductor device includes the steps of (a) preparing a substrate having a semiconductor element formed in a predetermined region of a surface of the substrate, (b) forming a first layer on the substrate, where the first layer is made of silicon oxide including at least one of boron and phosphor, (c) forming a second layer on a surface of the first layer, where the second layer is made of a material selected from a group consisting of silicon nitride and silicon oxide nitride, (d) coating a resist layer on the entire surface of the substrate, (e) exposing and developing a predetermined region of the resist layer using a reticle having a first opening so as to form a second opening in the resist layer, where the first opening has a polygonal shape having n corners respectively having obtuse angles and n is a natural number satisfying n.gtoreq.5, and (f) etching the second and first layers via the second opening.

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"A Split Wordline Cell for 16Mb SRAM Using Polysilicon Sidewall Contacts", Itabashi et al., IEDM Technical Digest, 1991, pp. 447-480.

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