Semiconductor device and method of producing the...

Details Semiconductor device and method of producing the... Semiconductor device and method of producing the...

2007-06-21

2010-10-26

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S788000, C438S792000, C257S410000, C257S411000

Reexamination Certificate

active

07820558

ABSTRACT:
A film with small hysteresis and high voltage resistance is obtained by reducing the carbon content in a gate insulating film on a SiC substrate. Specifically, the carbon content in the gate insulating film is set to 1×1020atoms/cm3or less. For this, using a plasma processing apparatus, a silicon oxide film is formed on the SiC substrate and then the formed silicon oxide film is reformed by exposure to radicals containing nitrogen atoms. Thus, the gate insulating film excellent in electrical properties is obtained.

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