Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-08-10
2010-02-09
Lindsay, Jr., Walter L (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21179
Reexamination Certificate
active
07659169
ABSTRACT:
There is a method of manufacturing a semiconductor device with a dual gate field effect transistor, the method including a semiconductor body a semiconductor material having a surface with a source region and a drain region of a first conductivity type and with a channel region of a second conductivity type opposite to the first conductivity type between the source region and the drain region and with a first gate region separated from the surface of the semiconductor body by a first gate dielectric above the channel region and with a second gate region situated opposite to the first gate region and formed within a recess in an opposite surface of the semiconductor body so as to be separated from the channel region by a second gate dielectric wherein the recess is formed with a local change of the doping of the channel region and by etching starting from the opposite surface of the semiconductor body.
REFERENCES:
patent: 5349228 (1994-09-01), Neudeck et al.
patent: 5461250 (1995-10-01), Burghartz et al.
patent: 5736435 (1998-04-01), Venkatesan et al.
patent: 5773331 (1998-06-01), Solomon et al.
patent: 5849612 (1998-12-01), Takahashi et al.
patent: 6621124 (2003-09-01), Ponomarev
patent: 2001/0017392 (2001-08-01), Comfort et al.
patent: 2006/0092695 (2006-05-01), Choi et al.
patent: 2006/0203430 (2006-09-01), Pinnow et al.
patent: 2007/0099405 (2007-05-01), Oliva et al.
patent: 2003309267 (2003-10-01), None
patent: WO 01/65609 (2001-09-01), None
H. J. A. Van Dijk et al; “Preparation of Thin Silicon Crystals by Electrochemical Thinning of Epitaxially Grown Structures”; Philips Research Laboratories, N.V. Philips Gloeilampenfabrieken, Eindhoven, Netherlands; Journal Electrochemical Society; vol. 117, No. 4; Apr. 1970; pp. 553-554.
J. C. Green; “Ethylene Diamine-Catechol-Water Mixture Shows Preferential Etching of p-n Junction”; Standard Telecommunication Laboratories, Harlow, Essex, England; Journal Electrochemical Society; vol. 116, No. 9; Sep. 1969; pp. 1325-1326.
J. B. Price et al; “Diffusion of Manganese in Single Crystalline Manganous Oxide”; Materials Research Center, Northwestern University, Evanston, Illinois; Journal Electrochemical Society; vol. 117, No. 2; Feb. 1970; pp. 242-247.
Hijzen Erwin
Hueting Raymond Josephus
Surdeanu Radu
Zandt Michael Antoine
Lindsay, Jr. Walter L
NXP B.V.
Patel Reema
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