Semiconductor device and method of manufacturing thereof

Details Semiconductor device and method of manufacturing thereof Semiconductor device and method of manufacturing thereof

2007-05-29

2007-05-29

Crane, Sara (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S402000, C257S404000, C257S408000

Reexamination Certificate

active

10806610

ABSTRACT:
This invention is characterized in that, a gate electrode27F formed on a P-type well3via a gate oxide film9, a high-concentration N-type source layer and a high-concentration N-type drain layer15respectively formed apart from the gate electrode and a low-concentration N-type source layer and a low-concentration N-type drain layer respectively formed so that they respectively surround the N-type source layer and the N-type drain layer10and respectively parted by a P-type body layer formed under the gate electrode27F are provided.

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