Semiconductor device and method of manufacturing the same by...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

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C438S151000, C438S157000, C257SE29273

Reexamination Certificate

active

07368333

ABSTRACT:
A method of manufacturing a semiconductor device by using atomic layer deposition includes depositing a silicon atomic layer film on a semiconductor substrate. The method may also include forming an epitaxial silicon film on the silicon atomic layer film by using the silicon atomic layer film as a seed layer.

REFERENCES:
patent: 6124158 (2000-09-01), Dautartas et al.
patent: 6429484 (2002-08-01), Yu
patent: 6723589 (2004-04-01), Lee et al.
patent: 6828218 (2004-12-01), Kim et al.
patent: 2002/0079507 (2002-06-01), Shim et al.
patent: 2004/0041212 (2004-03-01), Bhattacharyya
patent: 10-0449782 (2004-09-01), None

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