Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2007-05-18

2010-11-02

Ho, Tu-Tu V (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S331000, C257S334000, C257S510000, C257SE29260, C438S259000

Reexamination Certificate

active

07825461

ABSTRACT:
Example embodiments are directed to a method of manufacturing a semiconductor device and a semiconductor device including a substrate including a plurality of active regions and a plurality of isolation regions between adjacent active regions, each active region including a groove, a bottom surface of the groove being below an upper surface of the active region.

REFERENCES:
patent: 6048765 (2000-04-01), Wu
patent: 6373097 (2002-04-01), Werner
patent: 6437397 (2002-08-01), Lin et al.
patent: 6583479 (2003-06-01), Fastow et al.
patent: 6700154 (2004-03-01), Vidmantas et al.
patent: 6825526 (2004-11-01), He et al.
patent: 6844591 (2005-01-01), Tran
patent: 2002/0055230 (2002-05-01), Chang
patent: 2003/0047755 (2003-03-01), Lee et al.
patent: 2005/0054163 (2005-03-01), Kim et al.
patent: 2006/0180851 (2006-08-01), Lee et al.
patent: 2006/0258090 (2006-11-01), Bhattacharyya et al.
patent: 07-288324 (1995-10-01), None
patent: 10-2001-0046068 (2001-06-01), None
patent: 10-2005-0026319 (2005-03-01), None
patent: 10-2005-0043424 (2005-05-01), None
patent: 10-2006-0042460 (2006-05-01), None

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