Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1996-06-07
1999-06-22
Monin, Jr., Donald L.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438268, 438570, 438572, 438582, 257484, 257486, H01L 2978
Patent
active
059151790
ABSTRACT:
In the present invention, a vertical type MOSFET and a Schottky barrier diode which are used as a switching device of a DC--DC converter are formed on the same semiconductor substrate. Further, a barrier metal which is required for the Schottky barrier diode is also formed on an electrode portion of the vertical type MOSFET. In addition, a Schottky barrier diode forming region is formed to have low impurity concentration than a vertical type MOSFET forming region.
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T. M. Reith, et al., "Al/PtSi Schottky Barrier Diodes with a Diffusion Barrier," IBM Technical Disclosure Bulletin, vol. 16, No. 11, Apr. 1974, p. 3586.
Etou Hiroki
Ohno Kazunori
Saito Takaaki
Tsuchiya Naofumi
Utsumi Toshinari
Dietrich Michael
Monin, Jr. Donald L.
Sanyo Electric Co,. Ltd.
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