Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2007-08-02

2010-02-09

Ha, Nathan W (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29262

Reexamination Certificate

active

07659573

ABSTRACT:
A semiconductor device includes a semiconductor substrate, source and drain regions formed on the semiconductor substrate, a recess channel that is formed on the inner surface of a recess region, which is formed on the semiconductor substrate between the source and drain regions, and in an epitaxial semiconductor film in which dopants are doped. The semiconductor device further includes a gate insulating film formed on the recess channel, and a gate electrode that fills the recess region and is formed on the gate insulating film.

REFERENCES:
patent: 2005/0001266 (2005-01-01), Kim
patent: 2005/0253189 (2005-11-01), Cho et al.
patent: 2006/0027861 (2006-02-01), Takaishi
patent: 2006/0267085 (2006-11-01), Matsuura
patent: 2006/0273388 (2006-12-01), Yamazaki
patent: 2007/0200169 (2007-08-01), Kim
patent: 2000-077632 (2000-03-01), None
patent: 2001-035942 (2001-02-01), None
patent: 1999-145457 (1999-05-01), None
patent: 1020050004352 (2005-01-01), None
patent: 10-2005-0122475 (2005-12-01), None
patent: 10-2006-0058959 (2008-02-01), None
English Abstract Publication No. 1020060058959.
Korean Notice of Allowance: 9-5-2007-064529537; Nov. 11, 2007.
English Abstract for Publication No. 102005004352.

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