Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2007-03-14

2010-12-28

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S700000, C257SE21215, C257SE21324, C257SE21428

Reexamination Certificate

active

07858508

ABSTRACT:
In a method of manufacturing a semiconductor device, a trench is formed to have an upper quadrangular section and a lower circular section which is formed through a hydrogen annealing process, to extend in a depth direction of a semiconductor substrate. An insulating film is formed on a surface of the trench and a surface of the semiconductor substrate. A conductive film is formed to fill the trench whose surface is covered with the an insulating film. Source/drain regions are formed on both sides of the trench.

REFERENCES:
patent: 7205217 (2007-04-01), Huang et al.
patent: 2007/0099384 (2007-05-01), Han et al.
patent: 2007/0200169 (2007-08-01), Kim
patent: 2007/0221977 (2007-09-01), Tanaka
patent: 2007/0232042 (2007-10-01), Cho
patent: 2007/0254465 (2007-11-01), Jung
patent: 2007/0281455 (2007-12-01), Kim
S-RCAT (Sphere-shaped-Recess-Channel-Array-Transistor) Technology for 70nm DRAM feature size and beyond (2005 Symposium on VLSI Technology Digest of Technical Papers) pp. 34 and 35.

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