Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-08-09
2009-06-09
Mandala, Victor A (Department: 2826)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S270000, C257SE27091
Reexamination Certificate
active
07544568
ABSTRACT:
A gate trench13is formed in a semiconductor substrate10. The gate trench13is provided with a gate electrode16formed over a gate insulating film14. A portion of the gate electrode16protrudes from the semiconductor substrate10, and a sidewall24is formed over a side wall portion of the protruding portion. A body trench25is formed in alignment with an adjacent gate electrode16. A cobalt silicide film28is formed over a surface of the gate electrode16and over a surface of the body trench25. A plug34is formed using an SAC technique.
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Kachi Tsuyoshi
Matsuura Hitoshi
Nakazawa Yoshito
Yatsuda Yuji
Mandala Victor A
Miles & Stockbridge P.C.
Renesas Technology Corp.
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