Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-02-05
2009-08-04
Sefer, A. (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S402000, C257S404000, C257SE27061, C257SE27062, C257SE27064
Reexamination Certificate
active
07569898
ABSTRACT:
A semiconductor device according to an example of the present invention includes a first semiconductor region of a first conductivity type, a first MIS transistor of a second conductivity type formed in the first semiconductor region, a second semiconductor region of a second conductivity type, and a second MIS transistor of a first conductivity type formed in the second semiconductor region. A first gate insulating layer of the first MIS transistor is thicker than a second gate insulating layer of the second MIS transistor, and a profile of impurities of the first conductivity type in a channel region of the second MIS transistor has peaks.
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Ishibashi Shigeru
Kato Yoshiko
Noguchi Mitsuhiro
Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Rodela Eduardo A
Sefer A.
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