Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch
Reexamination Certificate
2006-11-28
2009-12-01
Purvis, Sue (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
With lattice constant mismatch
C257S288000, C257SE29193
Reexamination Certificate
active
07626215
ABSTRACT:
A first p-type SiGe mixed crystal layer is formed by an epitaxial growth method in a trench, and a second p-type SiGe mixed crystal layer is formed. On the second SiGe mixed crystal layer, a third p-type SiGe mixed crystal layer is formed. The height of an uppermost surface of the first SiGe mixed crystal layer from the bottom of the trench is lower than the depth of the trench with the surface of the silicon substrate being the standard. The height of an uppermost surface of the second SiGe mixed crystal layer from the bottom of the trench is higher than the depth of the trench with the surface of the silicon substrate being the standard. Ge concentrations in the first and third SiGe mixed crystal layers are lower than a Ge concentration in the second SiGe mixed crystal layer.
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Chinese Office Action dated Dec. 5, 2008, issued in corresponding Chinese Application No. 200610164669.X.
Fukuda Masahiro
Hatada Akiyoshi
Katakami Akira
Kim Young Suk
Ohta Hiroyuki
Ahmed Selim
Fujitsu Microelectronics Limited
Purvis Sue
Westerman, Hattori, Daniels & Adrian , LLP.
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