Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2007-01-25

2009-12-01

Ho, Tu-Tu V (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S331000, C257S334000, C257S510000, C257SE29260

Reexamination Certificate

active

07626230

ABSTRACT:
Example embodiments are directed to a method of manufacturing a semiconductor device and a semiconductor device including a substrate including a plurality of active regions and a plurality of isolation regions between adjacent active regions, each active region including a groove, a bottom surface of the groove being below an upper surface of the active region.

REFERENCES:
patent: 6048765 (2000-04-01), Wu
patent: 6373097 (2002-04-01), Werner
patent: 6437397 (2002-08-01), Lin et al.
patent: 6700154 (2004-03-01), Vidmantas et al.
patent: 6825526 (2004-11-01), He et al.
patent: 6844591 (2005-01-01), Tran
patent: 2004/0108542 (2004-06-01), Lin et al.
patent: 2005/0054163 (2005-03-01), Kim et al.
patent: 2006/0187711 (2006-08-01), Jang
patent: 07-288324 (1995-10-01), None
patent: 10-2001-0046068 (2001-06-01), None
patent: 10-2005-0026319 (2005-03-01), None
patent: 10-2005-0043424 (2005-05-01), None
patent: 10-2006-0042460 (2006-05-01), None

Affiliated with

Also associated with

Rating

Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4068595