Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2005-12-22

2009-06-16

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S596000, C257SE21618

Reexamination Certificate

active

07547606

ABSTRACT:
An exemplary method of manufacturing a semiconductor device according to an embodiment of the present invention includes forming a gate insulation layer on a semiconductor substrate; forming a plurality of gate electrodes on the gate insulation layer; forming pocket regions by a pocket ion implantation process using the gate electrode as an implantation mask; forming a capping electrode layer on the gate electrode by depositing a polysilicon layer; forming lightly doped regions by low-concentration ion implantation using the capping electrode layer as an implantation mask; forming spacer layers on the sidewall of the capping electrode layer; and forming source and drain regions by high concentration ion implantation using the spacer layers as an implantation mask. The method can suppress the occurrence of the punch-through phenomenon.

REFERENCES:
patent: 4597824 (1986-07-01), Shinada et al.
patent: 4968639 (1990-11-01), Bergonzoni
patent: 6081010 (2000-06-01), Sanchez

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