Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2007-10-12

2008-12-16

Pham, Hoai V (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S331000, C257SE27091

Reexamination Certificate

active

07465988

ABSTRACT:
A semiconductor device capable of suppressing void migration is provided. The semiconductor device includes a dummy region extending in a first direction substantially perpendicular to a second direction in which a word line extends. In addition, an isolation layer pattern may not cut the dummy region in the second direction. Consequently, leaning of the dummy region and void migration are prevented. A method of fabricating the semiconductor device is also provided.

REFERENCES:
patent: 6274905 (2001-08-01), Mo
patent: 6903428 (2005-06-01), Lee
patent: 7122431 (2006-10-01), Kim et al.
patent: 10-0199368 (1999-03-01), None
patent: 10-0281128 (2000-11-01), None
English language abstract for Korean Publication No. 10-0199368.
English language abstract for Korean Publication No. 10-0281128.

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