Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2006-12-15

2008-09-23

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having junction gate

C438S202000, C257SE21632

Reexamination Certificate

active

07427542

ABSTRACT:
A method of manufacturing a semiconductor device including a complementary metal oxide semiconductor (CMOS) and a bipolar junction transistor (BJT), the method comprising the steps of: forming a gate oxide layer on a substrate having a p-type and an n-type well; removing the gate oxide layer on the p-type well; forming bases on the p-type well; forming a first photosensitive layer pattern that exposes the bases on the substrate; implanting p-type impurity ions into the bases through the first photosensitive layer pattern; removing the first photosensitive layer pattern; forming a second photosensitive layer pattern that exposes the p-type and the n-type wells; and implanting n-type impurity ions into the p-type and the n-type wells through the second photosensitive layer pattern to form an emitter and a collector, respectively, to form the BJT. Therefore, CMOS manufacturing processes are used to form a high frequency BJT having improved frequency and noise characteristics.

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