Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2007-08-01

2008-09-02

Pham, Hoai v (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S218000, C438S303000, C257SE21632

Reexamination Certificate

active

07419864

ABSTRACT:
A semiconductor device includes a first n-type source/drain region48aand a second p-type source/drain region48bformed on a semiconductor substrate20away from side surfaces of first and second gate electrodes39a, 39bat a first interval W4respectively, a second n-type source/drain region48cand a first p-type source/drain region48dformed on the semiconductor substrate20away from side surfaces of third and fourth gate electrodes39c, 39dat a second interval W3, which is wider than the first interval W4, respectively, and third and fourth insulating sidewalls43c, 43dextended onto source/drain extensions42c,42don both sides of third and fourth gate electrodes39c,39dfrom edges of upper surfaces of the third and fourth gate electrodes39c,39drespectively.

REFERENCES:
patent: 5917222 (1999-06-01), Smayling et al.
patent: 6093950 (2000-07-01), Kuroda
patent: 6468860 (2002-10-01), Polavarapu et al.
patent: 6569742 (2003-05-01), Taniguchi et al.
patent: 2002/0164858 (2002-11-01), Sayama et al.
patent: 55-63873 (1980-05-01), None
patent: 3-242977 (1991-10-01), None
patent: 4-279033 (1992-10-01), None
patent: 5-175228 (1993-07-01), None
patent: 7-263705 (1995-10-01), None
patent: 10-242414 (1998-09-01), None
patent: 2000-196037 (2000-07-01), None
patent: 2000-299390 (2000-10-01), None
patent: 2001-93984 (2001-04-01), None
patent: 2002-26139 (2002-01-01), None
patent: 2003297944 (2003-10-01), None
European Search Report dated Mar. 26, 2008, issued in corresponding European Patent Application No. 05252769.

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