Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2006-04-27

2008-03-25

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S247000, C438S248000, C438S386000, C257SE27092

Reexamination Certificate

active

07348235

ABSTRACT:
An isolation insulation film is formed in an isolation trench in an upper portion of a silicon substrate. The isolation insulation film has an opening by which inner walls and bottom of the isolation trench are exposed. A lower diffusion layer serving as a lower electrode of capacitors of DRAM cells extends into the inner walls of the isolation trench exposed by the opening, and a dielectric layer is formed in almost constant thickness on the inner walls and bottom of the isolation trench exposed by the opening. An upper electrode is partially buried in the opening. A channel cut layer is formed in the vicinity of the bottom of the opening.

REFERENCES:
patent: 4894695 (1990-01-01), Ishii et al.
patent: 5302542 (1994-04-01), Kishi et al.
patent: 6468855 (2002-10-01), Leung et al.
patent: 6573548 (2003-06-01), Leung et al.
patent: 62-51249 (1987-03-01), None
patent: 5-315564 (1993-11-01), None
patent: 2004-311853 (2004-11-01), None
patent: WO 02/061806 (2002-08-01), None

Affiliated with

Also associated with

Rating

Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3970460