Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-08-21
2007-08-21
Lindsay, Jr., Walter (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S197000, C257SE21545
Reexamination Certificate
active
10983672
ABSTRACT:
A method of manufacturing a semiconductor device that suppresses emergence of a waste in an isolation trench formation process is to be provided.The method comprises forming an isolation trench having a predetermined depth from a surface of a semiconductor substrate; forming a dielectric layer on the surface of the semiconductor substrate including the isolation trench; filling the isolation trench with a CVD layer; removing the dielectric layer except a portion in the isolation trench by an etching; sequentially forming an insulating layer and a conductive layer; forming a resist defining a pattern which covers via the conductive layer a portion of the insulating layer in contact with the dielectric layer; and performing an anisotropic etching on the resist to thereby remove a portion of the conductive layer exposing a surface thereof.
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Dinh Thu-Huong
Lindsay, Jr. Walter
NEC Electronics Corporation
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