Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2007-05-15

2007-05-15

Jackson, Jerome (Department: 2815)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S672000, C438S675000, C438S677000, C257SE21577, C257SE21579

Reexamination Certificate

active

10969429

ABSTRACT:
A method of manufacturing a semiconductor device having a damascene structure contains a process of forming a first interlayer insulating film (6) and a second interlayer insulating film (4) formed of a low dielectric-constant film on a substrate, forming via holes (9) by using a first resist pattern (1a) formed on the second interlayer insulating film, conducting an organic peeling treatment using organic peeling liquid containing amine components and then forming a second resist pattern (1b) on the second interlayer insulating film. After the wet treatment, before a second antireflection coating (2b) is coated so as to be located below the second resist pattern is coated, at least one of an annealing treatment, a plasma treatment, a UV treatment and an organic solvent treatment is carried out to remove amine components which inhibit the catalysis reaction of acid occurring in the resist at the light exposure, thereby preventing degradation of the resolution of the second resist pattern (1b).

REFERENCES:
patent: 6350675 (2002-02-01), Chooi et al.
patent: 6583047 (2003-06-01), Daniels et al.
patent: 2002/0081855 (2002-06-01), Jiang et al.
patent: 2000-077409 (2000-03-01), None
Ebbing, General Chemistry, 1993, Houghton Mifflin Company, 4th Ed., p. G-16.

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