Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2007-01-23

2007-01-23

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21532

Reexamination Certificate

active

11046722

ABSTRACT:
A fin type MOSFET and a method of manufacturing the fin type MOSFET are disclosed. Gate structures in the fin type MOSFET are formed by a damascene process without a photolithography process. Impurities used to form a channel region are selectively implanted into portions of a semiconductor substrate adjacent to the gate structures.

REFERENCES:
patent: 5675164 (1997-10-01), Brunner et al.
patent: 6413802 (2002-07-01), Hu et al.
patent: 6525403 (2003-02-01), Inaba et al.
patent: 2002/0036290 (2002-03-01), Inaba et al.
patent: 2005/0170593 (2005-08-01), Kang et al.
patent: 7249768 (1995-09-01), None
patent: 1020030065864 (2003-08-01), None

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