Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2006-12-05

2006-12-05

Clark, S. V. (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S624000

Reexamination Certificate

active

07144804

ABSTRACT:
A semiconductor device comprises a semiconductor substrate, an interlayer insulating film including a first insulating film formed above the substrate and having a relative dielectric constant smaller than 2.5 and a second insulating film formed to cover the first insulating film and having a relative dielectric constant larger than that of the first insulating film, and a buried wiring formed within the interlayer insulating film. A bottom portion of the second insulating film is buried in the first insulating film at a number of points.

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People's Republic of China Patent Office Notification of the First Office Action and English translation thereof, Feb. 18, 2005.

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