Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2006-08-01

2006-08-01

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

Reexamination Certificate

active

07084037

ABSTRACT:
To ensure sufficient electrical insulation between bit and word lines and realize excellent charge holding characteristic by suppressing undesirable bird's beak formation, a buried bit line type flash memory includes bit lines formed by ion-implanting impurities into a semiconductor substrate, said bit lines serving also as sources and drains, and word lines crossing said bit lines and serving also as gate electrodes. After the impurity ion implantation for forming the bit lines and annealing for activating the impurities, an ONO film having a three-layer structure of silicon oxide film/silicon nitride film/silicon oxide film is formed.

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Office Action from German Patent Office for Application No. 101 46 013.9-33 dated Jun. 22, 2004.

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