Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-06-06
2006-06-06
Owens, Douglas W (Department: 2811)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S289000, C438S286000
Reexamination Certificate
active
07056797
ABSTRACT:
A semiconductor device has a gate electrode formed extending on a first and second gate insulation films formed on P type semiconductor substrate, an N+ type source region adjacent to one end of the gate electrode, an N− type drain region facing said source region through a channel region, having high impurity concentration peak at a position of the predetermined depth at least in said substrate under said first gate insulation film, and formed so that high impurity concentration becomes low at a region near surface of the substrate, an N− type drain region formed so as to range to the N− type drain region, an N+ type drain region separated from the other end of said gate electrode and included in said N− type drain region, and an N type layer formed so as to span from one end portion of said first gate insulation film to said N+ type drain region.
REFERENCES:
patent: 5303184 (1994-04-01), Noda
patent: 5578514 (1996-11-01), Kwon et al.
patent: 5846866 (1998-12-01), Huang et al.
patent: 6025231 (2000-02-01), Hutter et al.
patent: 6063674 (2000-05-01), Yang et al.
patent: 6117738 (2000-09-01), Tung
patent: 6207518 (2001-03-01), Akaishi et al.
patent: 6258674 (2001-07-01), Kwon et al.
patent: 11-121742 (1999-04-01), None
patent: 9215640 (1992-08-01), None
patent: 1998-069876 (1998-10-01), None
patent: 371374 (1999-10-01), None
Stephen A. Campbell, The Science and Engineering of Microelectronic Fabrication, 1996, Oxford University Press, Inc., pp. 49-50.
Kikuchi Shuichi
Nishibe Eiji
Suzuki Takuya
Owens Douglas W
Sanyo Electric Co,. Ltd.
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