Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate
2006-07-18
2006-07-18
Pham, Long (Department: 2814)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
C438S149000
Reexamination Certificate
active
07078321
ABSTRACT:
A crystalline semiconductor film in which the position and the size of crystal grains are controlled is provided, and a TFT that can operate at high speed is obtained by forming a channel formation region of the TFT from the crystalline semiconductor film. A heat retaining film is formed on an insulating surface, a semiconductor film is formed to cover the heat retaining film, and a reflective film is formed to partially cover the semiconductor film. The reflective films and the semiconductor film are irradiated with a laser beam. The reflective film creates a distribution in effective irradiation intensity of laser beam on the semiconductor film. The distribution, with the heat retaining effect provided by the heat retaining film, generates a temperature gradient in the semiconductor film. Utilizing these, the position where crystal nuclei are to be generated and the direction in which crystal growth should advance can be controlled and crystal grains having a large grain size can be obtained.
REFERENCES:
patent: 4020319 (1977-04-01), Shepard et al.
patent: 4069080 (1978-01-01), Osborne
patent: 4234356 (1980-11-01), Auston et al.
patent: 4422090 (1983-12-01), Shepherd et al.
patent: 4599133 (1986-07-01), Miyao et al.
patent: 4609407 (1986-09-01), Masao et al.
patent: 4659422 (1987-04-01), Sakurai
patent: 4925273 (1990-05-01), Maisenbacher et al.
patent: 5056099 (1991-10-01), Bradley
patent: 5219786 (1993-06-01), Noguchi
patent: 5247190 (1993-09-01), Friend et al.
patent: 5264072 (1993-11-01), Mukai
patent: 5304829 (1994-04-01), Mori et al.
patent: 5399502 (1995-03-01), Friend et al.
patent: 5426315 (1995-06-01), Pfiester
patent: 5432122 (1995-07-01), Chae
patent: 5543352 (1996-08-01), Ohtani et al.
patent: 5561081 (1996-10-01), Takenouchi et al.
patent: 5583366 (1996-12-01), Nakazawa
patent: 5594569 (1997-01-01), Konuma et al.
patent: 5612250 (1997-03-01), Ohtani et al.
patent: 5612251 (1997-03-01), Lee
patent: 5643801 (1997-07-01), Ishihara et al.
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5744824 (1998-04-01), Kousai et al.
patent: 5767003 (1998-06-01), Noguchi
patent: 5811322 (1998-09-01), Robinson
patent: 5817548 (1998-10-01), Noguchi et al.
patent: 5841197 (1998-11-01), Adamic, Jr.
patent: 5854803 (1998-12-01), Yamazaki et al.
patent: 5882960 (1999-03-01), Zhang et al.
patent: 5893730 (1999-04-01), Yamazaki et al.
patent: 5895933 (1999-04-01), Zhang et al.
patent: 5897799 (1999-04-01), Yamazaki et al.
patent: 5900980 (1999-05-01), Yamazaki et al.
patent: 5910262 (1999-06-01), Baumgart et al.
patent: 5923962 (1999-07-01), Ohtani et al.
patent: 5952058 (1999-09-01), Xuan
patent: 5953597 (1999-09-01), Kusumoto et al.
patent: 5959779 (1999-09-01), Yamazaki et al.
patent: 5960323 (1999-09-01), Wakita et al.
patent: 5968383 (1999-10-01), Yamazaki et al.
patent: 5972742 (1999-10-01), Zhang et al.
patent: 5986306 (1999-11-01), Nakajima et al.
patent: 6002101 (1999-12-01), Yamazaki et al.
patent: 6002523 (1999-12-01), Tanaka
patent: 6020045 (2000-02-01), Chen et al.
patent: 6020224 (2000-02-01), Shimogaichi et al.
patent: 6038075 (2000-03-01), Yamazaki et al.
patent: 6043512 (2000-03-01), Adachi
patent: 6051453 (2000-04-01), Takemura
patent: 6066516 (2000-05-01), Miyasaka
patent: 6078070 (2000-06-01), Robinson
patent: 6087625 (2000-07-01), Iso
patent: 6088379 (2000-07-01), Owa et al.
patent: 6091047 (2000-07-01), Miyakawa et al.
patent: 6107107 (2000-08-01), Bruce et al.
patent: 6108464 (2000-08-01), Foresi et al.
patent: 6133076 (2000-10-01), Yamazaki et al.
patent: 6171890 (2001-01-01), Adachi et al.
patent: 6190949 (2001-02-01), Noguchi et al.
patent: 6210996 (2001-04-01), Yamazaki et al.
patent: 6215154 (2001-04-01), Ishida et al.
patent: 6218260 (2001-04-01), Lee et al.
patent: 6245602 (2001-06-01), Ho et al.
patent: 6246524 (2001-06-01), Tanaka
patent: 6248606 (2001-06-01), Ino et al.
patent: 6266167 (2001-07-01), Klug et al.
patent: 6274462 (2001-08-01), Fiorini et al.
patent: 6277679 (2001-08-01), Ohtani
patent: 6285042 (2001-09-01), Ohtani et al.
patent: 6300176 (2001-10-01), Zhang et al.
patent: 6310362 (2001-10-01), Takemura
patent: 6322625 (2001-11-01), Im
patent: 6335541 (2002-01-01), Ohtani et al.
patent: 6337109 (2002-01-01), Yamazaki et al.
patent: 6346438 (2002-02-01), Yagishita et al.
patent: 6358766 (2002-03-01), Kasahara
patent: 6365933 (2002-04-01), Yamazaki et al.
patent: 6380009 (2002-04-01), Battersby
patent: 6380044 (2002-04-01), Talwar et al.
patent: 6410368 (2002-06-01), Kawasaki et al.
patent: 6426245 (2002-07-01), Kawasaki et al.
patent: 6479333 (2002-11-01), Takano et al.
patent: 6489222 (2002-12-01), Yoshimoto
patent: 6492659 (2002-12-01), Yamazaki et al.
patent: 6548370 (2003-04-01), Kasahara et al.
patent: 6555875 (2003-04-01), Kawasaki et al.
patent: 6559036 (2003-05-01), Ohtani et al.
patent: 6590230 (2003-07-01), Yamazaki et al.
patent: 6599788 (2003-07-01), Kawasaki et al.
patent: 6608357 (2003-08-01), Yamazaki et al.
patent: 6624013 (2003-09-01), Kawasaki et al.
patent: 6653657 (2003-11-01), Kawasaki et al.
patent: 6730550 (2004-05-01), Yamazaki et al.
patent: 6744008 (2004-06-01), Kasahara et al.
patent: 6762081 (2004-07-01), Yamazaki et al.
patent: 2003/0203656 (2003-10-01), Kasahara et al.
patent: 2004/0092061 (2004-05-01), Kawasaki et al.
patent: 2004/0140470 (2004-07-01), Kawasaki et al.
patent: 56-064480 (1981-06-01), None
patent: 58-218169 (1983-12-01), None
patent: 06-005862 (1994-01-01), None
patent: 07-130652 (1995-05-01), None
patent: 07-131034 (1995-05-01), None
patent: 07-161634 (1995-06-01), None
patent: 07-321339 (1995-12-01), None
patent: 08-228006 (1996-09-01), None
patent: 09-186336 (1997-07-01), None
patent: 09-260676 (1997-10-01), None
patent: 09-283443 (1997-10-01), None
patent: 10-092576 (1998-01-01), None
patent: 10-135468 (1998-05-01), None
patent: 10-135469 (1998-05-01), None
patent: 10-247735 (1998-09-01), None
patent: 11-219133 (1999-08-01), None
patent: 2000-150412 (2000-05-01), None
patent: 2001-203360 (2001-07-01), None
patent: WO 90/13148 (1990-11-01), None
Ishihara et al., “Location-Controlled Adjacent Grains Following Excimer-Laser Melting of Si Thin-Films”, pp. 153-156, 1998, AM-LCD, TFTP1-3.
Ishihara et al., “Location Control of Large Grain Following Excimer-Laser Melting of Si Thin-Films”, pp. 1071-1075, Mar. 1998, Jpn J. Appl. Phys. vol. 37, No. 3B.
Mariucci et al., “Lateral Growth Control in Excimer Laser Crystallized Polysilicon”, pp. 137-142, 1999, Thin Solid Films 337.
Schnek et al., “Polymers for Light Emitting Diodes”, pp. 33-37, Sep. 6-9, 1999, Euro Display '99, The 19th International Display Research Conference.
Shimizu et al., “High-Mobility Poly-Si Thin-Film Transistors Fabricated by a Novel Excimer Laser Crystallization Method”, pp. 112-117, Jan. 1993, IEEE Transactions on Electron Devices, vol. 40, No. 1.
Yoshimoto et al., “Excimer-Laser-Produced and Two-Dimensionally Position-Controlled Giant Si Grains on Organic SOG Underlayer”, pp. 285-286, Jul. 12-14, 2000, Digest of Technical Papers, AM-LCD 2000, International Workshop on Active-Matrix Liquid-Crystal Displays.
Specifications and Drawings for Application Serial No. 09/570,612, “Semiconductor Device and Method for its Fabrication”, Filing Date: May 12, 2000, Inventors: Shunpei Yamazaki et al.
Specifications and Drawings for Application Serial No. 09/612,100, “Method for Manufacturing a Semiconductor Device”, Filing Date: Jul. 7, 2000, Inventors: Ritsuko Kawasaki et al.
Specifications and Drawings for Application Serial No. 09/640,077, “Semiconductor Device and Method of Fabricating the Same”, Filing Date: Aug. 17, 2000, Inventors: Ritsuko Kawasaki et al.
Specifications and Drawings for Application Serial No. 09/640,084, “Semiconductor Device, Manufacturing Method Thereof, and Electronic Device”, Filing Date: Aug. 17, 2000, Inventors: Kenji Kasahara et al.
Specifications and Drawings for Application Serial No. 09/640,521, “Laser Apparatus and Laser Annealing Method”, Filing Date: A
Pham Long
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
Trinh Hoa B.
LandOfFree
Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3557514