Semiconductor device and method of manufacturing the same...

Details Semiconductor device and method of manufacturing the same... Semiconductor device and method of manufacturing the same...

2005-11-01

2005-11-01

Brewster, William M. (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S257000, C438S626000, C438S645000, C438S647000, C438S649000

Reexamination Certificate

active

06960500

ABSTRACT:
A semiconductor device comprises a plurality of gate lines composed of line shapes to function as gate electrodes in a plurality of transistors and separated from a substrate by a gate insulating layer, each having an upper metal silicide layer; and a plurality of source/drain regions formed on the substrate between said gate lines solely by carrying out impurity implantation processes.

REFERENCES:
patent: 5268330 (1993-12-01), Givens et al.
patent: 5869396 (1999-02-01), Pan et al.
patent: 6376876 (2002-04-01), Shin et al.

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