Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2005-02-08
2005-02-08
Everhart, Caridad (Department: 2825)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S778000, C438S789000
Reexamination Certificate
active
06852651
ABSTRACT:
The present invention relates to a semiconductor device in which an interlayer insulating film having a low dielectric constant is formed by covering wiring primarily made of a copper film, and to a method of manufacturing the same. In manufacturing the semiconductor device an insulating film having a low dielectric constant is formed on a substrate by converting a film-forming gas into a plasma for reaction. The method includes forming a low-pressure insulating film on the substrate by coverting the film-forming gas at a first gas pressure into a plasma and forming a high-pressure insulating film on the low-pressure insulating film by converting the film-forming gas at second gas pressure, higher than the first gas pressure, into a plasma and reaction.
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Ikakura Hiroshi
Kotake Yuichiro
Maeda Kazuo
Shioya Yoshimi
Suzuki Tomomi
Canon Sales Co., Inc.
Everhart Caridad
Lorusso, Loud & Kelly
Semiconductor Process Laboratory Co. Ltd.
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