Semiconductor device and method of manufacturing the same

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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Details

C438S585000, C438S592000, C438S593000, C438S648000, C438S652000, C438S656000, C438S685000

Reexamination Certificate

active

06916695

ABSTRACT:
One object of the present invention is to suppress a threshold voltage of at least an n-channel MISFET using a nitride of a high melting point metal at it's gate electrode. In order to achieve the object, a gate electrode109of a p-channel MISFET is constituted of a titanium nitride film106and a tungsten film107formed on the film106and a gate electrode110aof an n-channel MISFET is constituted of a titanium nitride film106aand a tungsten film107formed on the film106a. The titanium nitride film106ais formed by nitrogen ion implantation in the titanium nitride film106to decrease the work function.

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