Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-07-12
2005-07-12
Guerrero, Maria F. (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S585000, C438S592000, C438S593000, C438S648000, C438S652000, C438S656000, C438S685000
Reexamination Certificate
active
06916695
ABSTRACT:
One object of the present invention is to suppress a threshold voltage of at least an n-channel MISFET using a nitride of a high melting point metal at it's gate electrode. In order to achieve the object, a gate electrode109of a p-channel MISFET is constituted of a titanium nitride film106and a tungsten film107formed on the film106and a gate electrode110aof an n-channel MISFET is constituted of a titanium nitride film106aand a tungsten film107formed on the film106a. The titanium nitride film106ais formed by nitrogen ion implantation in the titanium nitride film106to decrease the work function.
REFERENCES:
patent: 5550079 (1996-08-01), Lin
patent: 5576579 (1996-11-01), Agnello et al.
patent: 5899740 (1999-05-01), Kwon
patent: 5962904 (1999-10-01), Hu
patent: 6037639 (2000-03-01), Ahmad
patent: 6090653 (2000-07-01), Wu
patent: 6121124 (2000-09-01), Liu
patent: 6251763 (2001-06-01), Inumiya et al.
patent: 6271573 (2001-08-01), Suguro
patent: 6410383 (2002-06-01), Ma
patent: 6730581 (2004-05-01), Suguro
patent: 06-005852 (1994-01-01), None
patent: 09-148455 (1997-06-01), None
patent: 11-224947 (1999-08-01), None
patent: 11-307729 (1999-11-01), None
Saito Yukishige
Wakabayashi Hitoshi
Guerrero Maria F.
Katten Muchin & Rosenman LLP
NEC Corporation
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