Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2005-07-05

2005-07-05

Niebling, John (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S003000, C438S240000, C438S256000, C438S396000, C438S399000, C257S295000, C257S296000, C257S306000

Reexamination Certificate

active

06913970

ABSTRACT:
A semiconductor device formed by forming contact holes in the insulating film, that covers the source/drain of the MOSFET and the capacitor in the memory cell region, on the lower electrode of the capacitor by the same steps, then filling the plugs into contact holes, and then forming the contact hole on the upper electrode of the capacitor. Accordingly, there can be provided the semiconductor device having the ferroelectric capacitor, capable of simplifying respective wiring connection structures to the upper electrode and the lower electrode of the capacitor by suppressing the damage to the capacitor formed over the transistor.

REFERENCES:
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patent: 6022774 (2000-02-01), Kawai et al.
patent: 6146906 (2000-11-01), Inoue et al.
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patent: 6313491 (2001-11-01), Shuto
patent: 6455882 (2002-09-01), Nakura
patent: 6521927 (2003-02-01), Hidaka et al.
patent: 2002/0036305 (2002-03-01), Sameshima
patent: 2002/0040988 (2002-04-01), Hidaka et al.
patent: 2002/0056861 (2002-05-01), Nagano et al.
patent: 03011766 (1991-01-01), None
patent: 03019372 (1991-01-01), None

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