Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1999-06-02
2000-08-22
Fahmy, Wael
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438218, 438231, 438232, 438233, 257274, 257338, 257369, H01L 218238
Patent
active
061071285
ABSTRACT:
Since a field effect MOS transistor can be formed with a reduced number of manufacturing processes, a semiconductor integrated circuit device can be materialized at a low cost. A semiconductor device has a structure in which a gate electrode is provided in the vicinity of the surface of a semiconductor substrate through a gate insulating film, a second conductive type heavily doped impurity region is provided in a region adjacent to a part of the gate electrode through a part of the gate insulating film and a part of a thick oxide film, another second conductive type heavily doped impurity region is provided in a region adjacent to an opposite part of the gate electrode opposing the part of the gate electrode through the part of the gate insulating film and a part of another thick oxide film, and a first conductive type heavily doped impurity region for device isolation is provided so as to surround the gate electrode and the second conductive type heavily doped impurity regions.
REFERENCES:
patent: 4282647 (1981-08-01), Richman
patent: 5438005 (1995-08-01), Jang
patent: 5494851 (1996-02-01), Lee et al.
patent: 5556798 (1996-09-01), Hong
patent: 5880502 (1999-03-01), Lee et al.
Gotou Sumitaka
Ishii Kazutoshi
Kanakubo Yoshihide
Kitta Tatsuya
Moya Yasuhiro
Fahmy Wael
Pham Long
Seiko Instruments Inc.
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