Semiconductor device and method of manufacturing the same,...

Details Semiconductor device and method of manufacturing the same,... Semiconductor device and method of manufacturing the same,...

2008-01-01

2008-01-01

Pham, Hoai v (Department: 2814)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S617000, C438S666000, C257SE21508

Reexamination Certificate

active

07314818

ABSTRACT:
A tip of a first wire is bonded to a first electrode. The first wire is drawn from the first electrode to a bump on a second electrode. A part of the first wire is deformed and bonded to the bump. A tip of a second wire formed in the shape of a ball is bonded to the bump by using a tool in a state in which at least a part of the tip is superposed on the first wire. A part of the first wire which is not deformed by bonding is prevented from being deformed by the tip of the second wire and the tool.

REFERENCES:
patent: 4845543 (1989-07-01), Okikawa et al.
patent: 5842628 (1998-12-01), Nomoto et al.
patent: 6215182 (2001-04-01), Ozawa et al.
patent: 6559526 (2003-05-01), Lee et al.
patent: 6727574 (2004-04-01), Tominatsu
patent: 6921016 (2005-07-01), Takahashi
patent: 6946380 (2005-09-01), Takahashi
patent: A 8-340018 (1996-12-01), None
patent: A 10-112471 (1998-04-01), None
patent: A 2001-118877 (2001-04-01), None
patent: A 2001-127246 (2001-05-01), None
patent: A 2001-284388 (2001-10-01), None
patent: A 2002-110898 (2002-04-01), None
patent: A 2002-280410 (2002-09-01), None

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