Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2008-07-08

2008-07-08

Lebentritt, Michael S. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S301000, C438S795000, C438S675000, C438S638000, C257S314000, C257SE21442, C257SE21134, C257SE21579

Reexamination Certificate

active

07396761

ABSTRACT:
In a semiconductor device and a method of manufacturing the semiconductor device, a plug and a channel structure are formed. The plug fills an opening and the channel structure extends upwardly from the plug. The channel structure has a substantially vertical sidewall. The opening is formed through an insulation structure located on a substrate. The plug and the channel structure comprise a material in a single crystalline state that is changed from an amorphous state by an irradiation of a laser beam. The channel structure is doped with impurities such as boron, phosphorus or arsenic.

REFERENCES:
patent: 6060392 (2000-05-01), Essaian et al.
patent: 6096622 (2000-08-01), Kim et al.
patent: 2004/0023449 (2004-02-01), Hsu et al.
patent: 2007/0132022 (2007-06-01), Son et al.
patent: 59-194445 (1984-11-01), None
patent: 1-264214 (1989-10-01), None
patent: 10-0275600 (2000-09-01), None

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