Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-03-01
2011-03-01
Sefer, A. (Department: 2893)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S201000, C438S266000, C257S314000, C257S315000, C257S316000, C257S321000, C257S324000, C257S257000, C257SE29305, C257S325000, C257SE29306, C257SE27078, C257SE21179, C257SE29300, C257SE21209, C257SE29304
Reexamination Certificate
active
07897455
ABSTRACT:
A semiconductor device manufacturing method includes forming a first insulating film on a semiconductor substrate containing silicon, the first insulating film having a first dielectric constant and constituting a part of a tunnel insulating film, forming a floating gate electrode film on the first insulating film, the floating gate electrode film being formed of a semiconductor film containing silicon, patterning the floating gate electrode film, the first insulating film, and the semiconductor substrate to form a first structure having a first side surface, exposing the first structure to an atmosphere containing an oxidizing agent, oxidizing that part of the floating gate electrode film which corresponds to a boundary between the first insulating film and the floating gate electrode film using the oxidizing agent, to form a second insulating film having a second dielectric constant smaller than the first dielectric constant and constituting a part of the tunnel insulating film.
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Kamioka Isao
Ozawa Yoshio
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Khan Farid
Sefer A.
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