Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

1998-08-31

2000-10-17

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438623, 438637, 438782, 438711, H01L 214763, H01L 2131

Patent

active

061331376

ABSTRACT:
In a semiconductor device which includes at least an interlayer insulating film containing a plurality of Si--H bonds, a Si--OH bond portion is removed from a surface of the interlayer insulating film.

REFERENCES:
patent: 5506177 (1996-04-01), Kishimoto et al.
patent: 5883014 (1999-03-01), Chen et al.
Japanese Office Action, dated Mar. 1, 2000, with partial translation.
British Search Report dated Dec. 16, 1998.
T. Miyanaga, et al., "Proc. of the 43rd Symp., Applied Physics" (April 1996), p. 654, 26a-N-6.

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