Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2011-05-17

2011-05-17

Toledo, Fernando L (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S289000, C257SE21433

Reexamination Certificate

active

07943448

ABSTRACT:
Embodiments relate to a semiconductor device and a method for manufacturing the same. According to embodiments, a semiconductor device may include an LDD which may include a space having a first width and may be formed in a semiconductor substrate, a channel area which may be formed in the semiconductor substrate within a space having a first width, a gate insulating layer which has a width wider than the first width and may be formed on an upper side of the channel area on the semiconductor substrate, a gate which may be formed with the first width on the gate insulating layer, and a spacer including a first spacer formed at both sides of the gate insulating layer and a second spacer formed at sidewalls of the gate.

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