Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

1998-11-10

2000-10-03

Whitehead, Jr., Carl

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438637, 438627, 438643, 438788, H01L 214763

Patent

active

061272566

ABSTRACT:
This invention is related to a metallization of Cu.
The semiconductor device comprises a first insulating layer having a groove in a surface thereof, a second insulating layer on a surface of the groove, made of a material having a low density of crystal defects in comparison with that of the first insulating layer, and a wiring layer buried in the groove, surrounded by the second insulating layer.

REFERENCES:
patent: 5429995 (1995-07-01), Nishiyama et al.
patent: 5521424 (1996-05-01), Uenu et al.
patent: 5592024 (1997-01-01), Aoyama et al.
patent: 5612254 (1997-03-01), Mu et al.
patent: 5632910 (1997-05-01), Nagayama et al.
patent: 5661334 (1997-08-01), Adram
patent: 5714418 (1998-02-01), Bai et al.

Affiliated with

Also associated with

Rating

Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-194879