Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-01-15
2008-01-15
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21410, C257SE21629
Reexamination Certificate
active
07319060
ABSTRACT:
A semiconductor device includes a pair of first source/drain regions disposed on a silicon substrate. A first silicon epitaxial layer pattern defines a gate forming region that exposes the silicon substrate between the pair of first source/drain regions. A first gate insulation layer is disposed on the silicon substrate in the gate forming region. A second gate insulation layer is disposed on a sidewall of the first silicon epitaxial layer pattern. A second silicon epitaxial layer pattern is disposed in the gate forming region and on the first silicon epitaxial layer pattern. A pair of second source/drain regions is disposed on the second silicon epitaxial layer pattern. A third gate insulation layer exposes the second silicon epitaxial layer pattern in the gate forming region and covers the pair of second source/drain regions. A gate is disposed on the second silicon epitaxial layer pattern in the gate forming region.
REFERENCES:
patent: 2003/0064567 (2003-04-01), Chaudhry et al.
patent: 2005/0012160 (2005-01-01), Brask et al.
Dongbu Electronics Co. Ltd.
Lebentritt Michael
Lowe Hauptman & Ham & Berner, LLP
Withers Grant S
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