Semiconductor device and method of manufacturing substrate

Active solid-state devices (e.g. – transistors – solid-state diode – Including semiconductor material other than silicon or... – Containing germanium – ge

Reexamination Certificate

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Reexamination Certificate

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06917096

ABSTRACT:
A semiconductor device comprises a base substrate, a silicon oxide layer formed on the base substrate, a first semiconductor layer formed on the silicon oxide layer, the first semiconductor layer including an SiGe layer with a Ge concentration not less than 30 atomic %, a second semiconductor layer formed on the first semiconductor layer, the second semiconductor layer including a Ge layer or an SiGe layer with a Ge concentration higher than the first semiconductor layer, a gate electrode configured to induce a channel in a surface region of the second semiconductor layer, and a gate insulating film formed between the second semiconductor layer and the gate electrode.

REFERENCES:
patent: 4442449 (1984-04-01), Lehrer et al.
patent: 4975387 (1990-12-01), Prokes et al.
patent: 5019882 (1991-05-01), Solomon et al.
patent: 5218213 (1993-06-01), Gaul et al.
patent: 5521108 (1996-05-01), Rostoker et al.
patent: 5759898 (1998-06-01), Ek et al.
patent: 5906951 (1999-05-01), Chu et al.
patent: 6059895 (2000-05-01), Chu et al.
patent: 6228692 (2001-05-01), Tsutsu
patent: 6407406 (2002-06-01), Tezuka
Sugiyama e al., “Semiconductor Devices and Methods for Producing Semiconductor Devices”, U.S. Appl. No. 09/658,191, filed Sep. 8, 2000.
Sugiyama et al., “Semiconducor Device and Method for Manufacturing the Same”, U.S. Appl. No. 09/468,923, filed Dec. 22, 1999.
Mizuno et al., “Semiconductor Device and Method of Manufacturing the Same”, U.S. Appl. No. 09/810,607, filed Mar. 19, 2001.
Y.H. Xie, et al., “Very High Molbility Two-Dimensional Hole Gas in Si/GexSi1-x/Ge Structures Grown by Molecular Beam Epitaxy”, Appl. Phys. Lett. 63 (16), pp. 2263-2264, (1993).
E. Murakami et al., “Fabrication of a Strain-Controlled SiGe/Ge MODFET with Ultrahigh Hole Mobility”, IEEE Transactions on Electron Devices, vol. 41, No. 5, pp. 857-861, (1994).
Copending U.S.Appl. No. 09/955,144, Naoharu Sugiyama et al., “Semiconductor Device and Method of Producing the Same, ” filed Sep. 19, 2001.

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