Active solid-state devices (e.g. – transistors – solid-state diode – Including semiconductor material other than silicon or... – Containing germanium – ge
Reexamination Certificate
2005-07-12
2005-07-12
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Including semiconductor material other than silicon or...
Containing germanium, ge
Reexamination Certificate
active
06917096
ABSTRACT:
A semiconductor device comprises a base substrate, a silicon oxide layer formed on the base substrate, a first semiconductor layer formed on the silicon oxide layer, the first semiconductor layer including an SiGe layer with a Ge concentration not less than 30 atomic %, a second semiconductor layer formed on the first semiconductor layer, the second semiconductor layer including a Ge layer or an SiGe layer with a Ge concentration higher than the first semiconductor layer, a gate electrode configured to induce a channel in a surface region of the second semiconductor layer, and a gate insulating film formed between the second semiconductor layer and the gate electrode.
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Kurobe Atsushi
Mizuno Tomohisa
Sugiyama Naoharu
Takagi Shin-ichi
Tezuka Tsutomu
Andújar Leonardo
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Flynn Nathan J.
Kabushiki Kaisha Toshiba
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