Semiconductor device and method of manufacturing same

Details Semiconductor device and method of manufacturing same Semiconductor device and method of manufacturing same

2007-04-10

2007-04-10

Cao, Phat X. (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S244000, C438S250000

Reexamination Certificate

active

11074656

ABSTRACT:
A semiconductor device comprises a semiconductor substrate, and a capacitor provided above the semiconductor substrate, the capacitor comprises a lower electrode containing metal, a first dielectric film provided above the lower electrode and containing tantalum oxide or niobium oxide, a top surface of the first dielectric film including a projecting portion, an upper electrode provided above the projecting portion of the first dielectric film and containing metal, a second dielectric film provided between the lower electrode and the first dielectric film and having a lower permittivity than the first dielectric film, and a third dielectric film provided between the projecting portion of the first dielectric film and the upper electrode and having a lower permittivity than the first dielectric film.

REFERENCES:
patent: 6821839 (2004-11-01), Chung
patent: 2004/0104420 (2004-06-01), Coolbaugh et al.
patent: 2005/0006690 (2005-01-01), Woo et al.
patent: 2000-082782 (2000-03-01), None
patent: 2000-183289 (2000-06-01), None
patent: 2000-208720 (2000-07-01), None
patent: 2001-274340 (2001-10-01), None
Japanese Patent Office Notification of Reasons for Rejection and English translation thereof in Japanese Application No. 2003-053184.

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