Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-08-01
2006-08-01
Everhart, C (Department: 2825)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S057000, C438S366000, C438S243000, C438S245000, C438S246000, C257S301000, C257S306000, C257S315000, C257S700000
Reexamination Certificate
active
07084028
ABSTRACT:
A semiconductor device comprises a semiconductor substrate having a cavity region inside; a first insulation film formed on the inner wall of the cavity region; a first electrode formed on the inner wall of the first insulation film in the cavity region, and having a hollow cavity inside; a semiconductor region overlying the cavity region and including first semiconductor regions of a first conductivity type and second semiconductor regions of a second conductivity type which are adjacent to each other, said semiconductor region having a bottom surface on which the first electrode is formed via the first insulation film; a second insulation film covering the top surface of the semiconductor region; and a second electrode formed on the semiconductor region via the second insulation film and electrically insulated from the semiconductor region and the first electrode.
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Takashi Ohsawa, et al., 9.1 “Memory Design Using One-Transistor Gain Cell on SOI”, ISSCC, Feb. 5, 2002, 3 pages.
Anya Igwe U.
Everhart C
Kabushiki Kaisha Toshiba
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