Semiconductor device and method of manufacture thereof

Details Semiconductor device and method of manufacture thereof Semiconductor device and method of manufacture thereof

2007-04-25

2009-08-25

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S264000, C257SE21176

Reexamination Certificate

active

07579241

ABSTRACT:
A semiconductor device comprises a semiconductor substrate, an electrically rewritable semiconductor memory cell provided on the semiconductor substrate, the memory cell comprising an island semiconductor portion provided on the surface of the semiconductor substrate or above the semiconductor substrate, a first insulating film provided on a top surface of the island semiconductor portion, a second insulating film provided on a side surface of the island semiconductor portion and being smaller in thickness than the first insulating film, and a charge storage layer provided on the side surface of the island semiconductor portion with the second insulating film interposed therebetween and on a side surface of the first insulating film, a third insulating film provided on the charge storage layer, and a control gate electrode provided on the third insulating film.

REFERENCES:
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patent: 6259135 (2001-07-01), Hsu et al.
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patent: 6870215 (2005-03-01), Endoh et al.
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patent: 05-291586 (1993-11-01), None
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patent: 7-45797 (1995-02-01), None
patent: 08-017948 (1996-01-01), None
Hieda, K. et al., “Effects of a New Trench-Isolated Transistor Using Sidewall Gates”, IEEE Transactions on Electron Devices, vol. 36, No. 9, pp. 1615-1619, (Sep. 1989).
Notice of Reasons for Rejection issued by the Japanese Patent Office on Jun. 10, 2008, for Japanese Patent Application No. 2004-048170, and English-language translation thereof.

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