Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-07-31
2009-11-10
Prenty, Mark (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S154000
Reexamination Certificate
active
07615435
ABSTRACT:
A semiconductor device and method of manufacture and, more particularly, a semiconductor device having strain films and a method of manufacture. The device includes an embedded SiGeC layer in source and drain regions of an NFET device and an embedded SiGe layer in source and drain regions of a PFET device. The PFET device is subject to compressive strain. The method includes embedding SiGe in source and drain regions of an NFET device and implanting carbon in the embedded SiGe forming an SiGeC layer in the source and drain regions of the NFET device. The SiGeC is melt laser annealed to uniformly distribute the carbon in the SiGeC layer, thereby counteracting a strain generated by the embedded SiGe.
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Gluschenkov Oleg
Jain Sameer
Liu Yaocheng
Abate Joseph
Greenblum & Bernstein P.L.C.
International Business Machines - Corporation
Prenty Mark
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