Semiconductor device and method of manufactuing the same

Details Semiconductor device and method of manufactuing the same Semiconductor device and method of manufactuing the same

2006-07-25

2006-07-25

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S197000, C438S257000, C438S264000, C438S294000

Reexamination Certificate

active

07081386

ABSTRACT:
A semiconductor device comprises a semiconductor substrate, and a non-volatile memory cell provided on the semiconductor substrate, the non-volatile memory cell comprising a tunnel insulating film having a film thickness periodically and continuously changing in a channel width direction of the non-volatile memory cell, a floating gate electrode provided on the tunnel insulating film, a control gate electrode provided above the floating gate electrode, and an interelectrode insulating film provided between the control gate electrode and the floating gate electrode.

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Notification of Reasons for Rejection (Office Action) for Japanese Patent Application No. 2003-149335, mailed Jul. 5, 2005 and English translation thereof.
Final Notice of Rejection (Office Action) for Japanese Patent Application No. 2003-149335, mailed Feb. 7, 2006 and English translation thereof.

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