Semiconductor device and method of making the same

Details Semiconductor device and method of making the same Semiconductor device and method of making the same

2007-08-21

2007-08-21

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S303000, C438S366000, C438S595000

Reexamination Certificate

active

10834474

ABSTRACT:
A semiconductor device comprises a substrate, a gate disposed on the substrate, and a source and drain formed in the substrate on both sides of the gate. The device further comprises a thin spacer having a first layer and a second layer formed on the sidewalls of the gate, wherein the first and second layers have comparable wet etch rates of at least 10 Å per minute using the same etchant.

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