Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-02-02
2009-12-29
Vu, David (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE23145
Reexamination Certificate
active
07638423
ABSTRACT:
A method of forming wires of a semiconductor device including forming a first metal wire on a semiconductor substrate; forming a first insulating film on the first metal wire; etching a portion of the first insulating film to expose a surface portion of the first metal wire; forming a first barrier metal film on sidewalls of the opening and the exposed first metal wire; etching a portion of the first barrier metal film on the first metal wire to expose a surface portion of the first metal wire; performing a heat treatment process on the exposed surface portion of the first metal wire to improve surface roughness; and forming a second wire by filling the opening using a conductive material.
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Kim Andrew-tae
Lee Jung-eun
Moon Young-joon
Wee Young-jin
Harness & Dickey & Pierce P.L.C.
Samsung Electronics Co,. Ltd.
Vu David
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