Semiconductor device and method of forming the same

Details Semiconductor device and method of forming the same Semiconductor device and method of forming the same

2005-01-25

2005-01-25

Whitehead, Jr., Carl (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

Reexamination Certificate

active

06847086

ABSTRACT:
A highly-integrated, high speed semiconductor device includes a device isolation film defining an active region at a SOI wafer having a stacked structure of a first silicon layer, a filled insulating film and a second silicon layer—the second silicon layer being the active region between the device isolation film with an intervening first silicide layer; the first silicide layer formed on a gate electrode on the active region and an impurity junction region; and a second silicide layer intervening at the interface of a device isolation film and a second silicon layer and connected to the first silicide layer. Thus, operating characteristics of the device are improved by minimizing the resistance of an impurity junction region and reducing the manufacturing cost.

REFERENCES:
patent: 4522845 (1985-06-01), Powell et al.
patent: 4711017 (1987-12-01), Lammert
patent: 4839309 (1989-06-01), Easter et al.
patent: 5086017 (1992-02-01), Lu
patent: 5138573 (1992-08-01), Jeuch
patent: 5278438 (1994-01-01), Kim et al.
patent: 5830775 (1998-11-01), Maa et al.
patent: 5872044 (1999-02-01), Hemmenway et al.
patent: 6017801 (2000-01-01), Youn
patent: 6060749 (2000-05-01), Wu
patent: 6133105 (2000-10-01), Chen et al.
patent: 6383877 (2002-05-01), Ahn et al.
patent: 6432797 (2002-08-01), Cha et al.
patent: 20020142552 (2002-10-01), Wu
patent: 20030036233 (2003-02-01), Chen

Affiliated with

Also associated with

Rating

Semiconductor device and method of forming the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of forming the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of forming the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3398543