Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Assembly of plural semiconductive substrates each possessing...
Reexamination Certificate
2011-04-12
2011-04-12
Smith, Matthew S (Department: 2895)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Assembly of plural semiconductive substrates each possessing...
C438S107000, C438S108000, C257S778000, C257S700000, C257S737000, C257S738000, C257SE23175, C257SE23169, C257SE23151, C257SE23142
Reexamination Certificate
active
07923295
ABSTRACT:
A semiconductor device is made by forming a photoresist layer over a metal carrier. A plurality of openings is formed in the photoresist layer extending to the metal carrier. A conductive material is selectively plated in the openings of the photoresist layer using the metal carrier as an electroplating current path to form wettable contact pads. A semiconductor die has bumps formed on its surface. The bumps are directly mounted to the wettable contact pads to align the die with respect to the wettable contact pads. An encapsulant is deposited over the die. The metal carrier is removed. An interconnect structure is formed over the encapsulant and electrically connected to the wettable contact pads. A plurality of conductive vias is formed through the encapsulant and extends to the contact pads. The conductive vias are aligned by the wettable contact pads with respect to the die to reduce interconnect pitch.
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Chow Seng Guan
Lin Yaojian
Shim Il Kwon
Atkins Robert D.
Patent Law Group
Smith Matthew S
STATS ChipPAC Ltd.
Sun Yu-Hsi
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