Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2008-04-25
2011-11-08
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S281000, C438S283000, C438S305000, C438S585000, C438S926000, C430S004000, C430S005000, C430S006000, C430S312000, C430S394000, C257S202000, C257S203000, C257S204000, C257S205000, C257S206000, C257S207000, C257S208000, C257S209000, C257S210000, C257S211000, C257S368000, C257S390000, C257S499000, C257SE29255, C257SE21540, C257SE27060, C257SE21177
Reexamination Certificate
active
08053346
ABSTRACT:
A gate in a semiconductor device is formed to have a dummy gate pattern that protects a gate. Metal lines are formed to supply power for a semiconductor device and transfer a signal. A semiconductor device includes a quad coupled receiver type input/output buffer. The semiconductor device is formed with a gate line that extends over an active region, and a gate pad located outside of the active region. The gate line and the gate pad are adjoined such that the gate line and a side of the gate pad form a line. Dummy gates may also be applied. The semiconductor device includes a first metal line patterns supplying power to a block having a plurality of cells, a second metal line pattern transferring a signal to the cells, and dummy metal line patterns divided into in a longitudinal direction.
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Choi Won John
Kang Seoung Hyun
Kim Ho Ryong
Kim Jae Hwan
Ryu Nam Gyu
Dulka John P
Hynix / Semiconductor Inc.
Ladas & Parry LLP
Richards N Drew
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