Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With electrical contact in hole in semiconductor
Reexamination Certificate
2009-11-30
2010-12-28
Lee, Calvin (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With electrical contact in hole in semiconductor
C257S698000, C438S667000
Reexamination Certificate
active
07859085
ABSTRACT:
A semiconductor die has a first insulating material disposed around a periphery of the die. A portion of the first insulating material is removed to form a through hole via (THV). Conductive material is deposited in the THV. A second insulating layer is formed over an active surface of the die. A first passive circuit element is formed over the second insulating layer. A first passive via is formed over the THV. The first passive via is electrically connected to the conductive material in the THV. The first passive circuit element is electrically connected to the first passive via. A third insulating layer is formed over the first passive circuit element. A second passive circuit element is formed over the third insulating layer. A fourth insulating layer is formed over the second passive circuit element. A plurality of semiconductor die is stacked and electrically interconnected by the conductive via.
REFERENCES:
patent: 6420244 (2002-07-01), Lee
patent: 6495912 (2002-12-01), Huang et al.
patent: 6852607 (2005-02-01), Song et al.
patent: 6911392 (2005-06-01), Bieck et al.
patent: 7361532 (2008-04-01), Fukazawa
patent: 7648911 (2010-01-01), Pagaila et al.
patent: 2004/0245623 (2004-12-01), Hara et al.
patent: 2005/0046002 (2005-03-01), Lee et al.
patent: 2008/0001285 (2008-01-01), Yang
Do Byung Tai
Lin Yaojian
Pagaila Reza A.
Atkins Robert D.
Lee Calvin
STATS ChipPAC Ltd.
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